Download Advances in Monolithic Microwave Integrated Circuits for by Arjuna Marzuki, Ahmad Ismat Abdul Rahim, Mourad Loulou PDF

By Arjuna Marzuki, Ahmad Ismat Abdul Rahim, Mourad Loulou

Monolithic Microwave built-in Circuit (MMIC) is an digital equipment that's everyday in all excessive frequency instant structures. In constructing MMIC as a product, figuring out research and layout ideas, modeling, size method, and present developments are essential.

Advances in Monolithic Microwave built-in Circuits for instant platforms: Modeling and layout Technologies is a vital resource of data on MMIC improvement, containing learn on idea, layout, and sensible methods to built-in circuit units. This booklet is of curiosity to researchers in and academia operating within the parts of circuit layout, built-in circuits, and RF and microwave, in addition to an individual with an curiosity in monolithic instant equipment development.

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Jung, Y. , Lee, D. , & Chae, S. I. (2005). 25-µm CMOS Quad-Band GSM RF Transceiver Using an Efficient Local Oscillator (LO) Frequency Plan. IEEE Journal of Solidstate Circuits, 40(5). , & Lee, T. H. (1997). RF Linearity of Short-Channel MOSFETs. In Proceedings of the First International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (pp. 81-84). , & Weigel, R. (2002). RF System Concepts for Highly Integrated RFICs for W-CDMA Mobile Radio Terminals. IEEE Transactions on Microwave Theory and Techniques, 503(1).

Razavi, B. (2001). Design of Analog CMOS Integrated Circuits: McGraw-Hill Series in Electrical and Computer Engineering. New York, USA: McGraw-Hill. , & Behzad, R. (1998). RF microelectronics: Vol. 46. PTR. NJ: Prentice Hall. Sedra, A. , & Smith, K. C. (2004). ). New York: Oxford University Press. Shaeffer, D. , & Lee, T. H. (1997). 5-GHz CMOS low noise amplifier. Solid-State Circuits. IEEE Journal of, 32(5), 745–759. 46 LNA Inventions Shaeffer, D. , & Lee, T. H. (1999). The design and implementation of low-power CMOS radio receivers.

21) are used to determine the LNA’s components values for the upper band which operates at 2 GHz. For example, the width of the transistor and the Cex of the LNA to operate at 2 GHz were obtained to be 350 μm and 60 fF. Accordingly, the components values for lower band which operates at 900 MHz were obtained as shown in Table 7. 20), the transconductance ( g m ) of lower band and upper band have been calculated and the calculations show that g m,lower > g m,upper . Also, total gate-source capacitance ( Cgs,t ) of 17 Multi-Standard Multi-Band Reconfigurable LNA Table 7.

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